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| 2SK3647-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C Ratings 100 70 41 5.2 ** 164 30 41 204.7 20 5 150 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/s kV/s W Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate Operating and storage Tch C temperature range Tstg C S1 : Source ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=146H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 100V *5 VGS=-30V *6 t=60sec f=60Hz = = = = S2 : Source Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 VCC=50V ID=30A VGS=10V L=146H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 34 18 1110 280 22 16 23 31 16 32 13 9 1.10 0.1 0.38 Min. 100 3.0 Typ. Max. 5.0 25 250 100 44 1665 420 33 24 35 47 24 48 20 14 1.65 Units V V A nA m S pF 9 ns nC 41 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.833 87.0 52.0 Units C/W C/W C/W ** ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) 1 2SK3647-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 200 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 175 4 150 (Drain pad area : 500mm ) 2 125 3 PD [W] 100 PD [W] 0 25 50 75 100 125 150 75 2 50 1 25 0 0 0 25 50 75 100 125 150 Tc [C] Tc [C] 600 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=17A Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 120 20V 500 100 10V 400 80 EAS [mJ] ID [A] IAS=25A 300 IAS=41A 200 60 8V 7.5V 40 100 20 7.0V 6.5V 6.0V VGS=5.5V 10 12 0 0 25 50 75 100 125 150 0 0 2 4 6 8 starting Tch [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 gfs [S] 1 10 100 VGS[V] ID [A] 2 2SK3647-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance 0.18 RDS(on)=f(ID):80s Pulse test, Tch=25C 100 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V VGS= 6.5V7.0V 7.5V 8V 0.15 6.0V 80 RDS(on) [ ] 0.12 10V 0.09 RDS(on) [ m ] 60 max. 40 typ. 0.06 20V 20 0.03 0.00 0 20 40 60 80 100 120 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 14 12 max. 10 Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 8 6 4 2 0 0 10 Vcc= 50V 20 30 40 50 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 0 Ciss 10 C [nF] Coss 10 -1 IF [A] 1 Crss 10 -2 10 -1 10 0 10 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3647-01 Typical Switching Characteristics vs. ID 10 3 FUJI POWER MOSFET t=f(ID):Vcc=48V, VGS=10V, RG=10 100 90 tf Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Rth(ch-a) [C/W] 80 70 60 50 40 30 20 10 10 2 td(off) t [ns] td(on) 10 1 tr 10 0 0 -1 10 10 0 10 1 10 2 0 1000 2000 3000 2 4000 5000 ID [A] Drain Pad Area [mm ] 10 3 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] 10 2 Single Pulse 10 1 10 0 10 -1 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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